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ZXTD4591AM832
MPPSTM Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR
SUMMARY NPN Transistor PNP Transistor DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package), these high performance NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (0.9mm nom) Reduced component count
3mm x 2mm Dual Die MLP
VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A
C2
C1
FEATURES
* Low Saturation Voltage (500mV max @1A) * HFE specified up to 2A * IC = 2.5A Continuous Collector Current * 3mm x 2mm MLP
B2
B1
E2
E1
APPLICATIONS
* DC - DC Converters * Power switches * Motor control * LED Backlighting circuits
PINOUT
ORDERING INFORMATION
DEVICE ZXTD4591AM832TA ZXTD4591AM832TC REE L 7 13 TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 10000
3mm x 2mm Dual MLP underside view
DEVICE MARKING
91A
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ZXTD4591AM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (a)(f) Continuous Collector Current (b)(f) Base Current Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor Power Dissipation at TA=25C (e)(g) Linear Derating Factor Storage Temperature Range Junction Temperature SYMBOL V CBO V CEO V EBO I CM IC IC IB PD PD PD PD PD PD T stg Tj NPN 40 40 5 3 2 2.5 300 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 -55 to +150 150 PNP -40 -40 -5 -3 -1.5 -2.0 UNIT V V V A A A mA W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g)
Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW.
SYMBOL R JA R JA R JA R JA R JA R JA
VALUE 83.3 51 125 111 73.5 41.7
UNIT C/W C/W C/W C/W C/W C/W
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TYPICAL CHARACTERISTICS
AWAITING GRAPH
AWAITING GRAPH
NPN Safe Operating Area
3.5
PNP Safe Operating Area
Thermal Resistance (C/W)
80 60
Max Power Dissipation (W)
Note (a)(f)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
1oz Cu Note (d)(f)
2oz Cu Note (e)(g)
Tamb=25C
2oz Cu Note (a)(f) 1oz Cu Note (d)(g)
D=0.5
40 20
D=0.2 Single Pulse D=0.05 D=0.1
0 100 1m
10m 100m
1
10
100
1k
25
50
75
100
125
150
Pulse Width (s)
Temperature (C)
Transient Thermal Impedance
3.5 3.0
Derating Curve
225 200 175 150 125 100 75 50 25 0 0.1
Thermal Resistance (C/W)
PD Dissipation (W)
2.5 2.0 1.5 1.0 0.5 0.0 0.1
Tamb=25C Tj max=150C Continuous 2oz copper Note (f)
2oz copper Note (g)
1oz copper Note (f) 1oz copper Note (g)
1oz copper Note (f)
1oz copper Note (g)
2oz copper Note (f) 2oz copper Note (g)
1
10
100
1
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
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ZXTD4591AM832
NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) V BE(sat) V BE(on) h FE 300 300 200 35 150 10 MIN. 40 40 5 100 100 100 300 500 1.1 1.0 900 TYP. MAX. UNIT V V V nA nA nA mV mV V V CONDITIONS. I C =100 A I C =10mA* I E =100 A V CB =30V V EB =4V V CE =30V I C =0.5A, I B =50mA* I C =1A, I B =100mA* I C =1A, I B =100mA* I C =1A, V CE =5V* I C =1mA, V CE =5V* I C =0.5A, V CE =5V* I C =1A, V CE =5V* I C =2A, V CE =5V* MHz pF I C =-50mA, V CE =-10V f=100MHz V CB =-10V, f=1MHz
Transition Frequency Output Capacitance
fT C obo
*Measured under pulsed conditions.
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PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) MIN. -40 -40 -5 -100 -100 -100 -200 -350 -500 -1.1 -1.0 300 300 250 160 30 150 10 800 TYP. MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. I C =-100 A I C =-10mA* I E =-100 A V CB =-30V V EB =-4V V CE =-30V I C =-0.1A, I B =-1mA* I C =-0.5A, I B =-20mA* I C =-1A, I B =-100mA* I C =-1A, I B =-50mA* I C =-1A, V CE =-5V* I C =-1mA, V CE =-5V* I C =-0.1A, V CE =-5V* I C =-0.5A, V CE =-5V* I C =-1A, V CE =-5V* I C =-2A, V CE =-5V* MHz pF I C =-50mA, V CE =-10V f=100MHz V CB =-10V, f=1MHz
V BE(sat) V BE(on) h FE
Transition Frequency Output Capacitance
fT C obo
*Measured under pulsed conditions.
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MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES DIM A A1 A2 A3 b b1 D D2 D3 MIN. 0.80 0.00 0.65 0.15 0.24 0.17 MAX. 1.00 0.05 0.75 0.25 0.34 0.30 INCHES MIN. 0.031 0.00 0.0255 0.006 0.009 0.0066 MAX. 0.039 0.002 0.0295 0.0098 0.013 0.0118 DIM e E E2 E4 L L2 r 0 MILLIMETRES MIN. MAX. INCHES MIN. MAX.
0.65 REF 2.00 BSC 0.43 0.16 0.20 0.63 0.36 0.45 0.125 0.075 BSC 12
0.0256 BSC 0.0787 BSC 0.017 0.006 0.0078 0.00 0.0249 0.014 0.0157 0.005
3.00 BSC 0.82 1.01 1.02 1.21
0.118 BSC 0.032 0.0397 0.040 0.0476
0.0029 BSC 0 12
(c) Zetex plc 2002
Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uksales@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to
www.zetex.com ISSUE 1 - JUNE 2002 8

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